Page 47 - kV-kA ABB_Broschure_Power_Semiconductors_2021_EN

Asymmetric IGCTs Part number
5SHY 35L4520 5SHY 35L4522 5SHY 45L4520 5SHY 55L4500 5SHY 65L4521*New 5SHY 65L4522**New 5SHY 50L5500 5SHY 42L6500
ITGQM V A
17 4000 17 4000 17 4500 17 5000 17 6500 17 6000 17 3600 17 3800
ITAVM ITSM
TC = 85 °C 3 ms TVJM
VT VT0
rT TVJM RthJC RthCH Fm
VGIN Outline V
28-40 Fig. 1 28-40 Fig. 1 28-40 Fig. 1 28-40 Fig. 1 28-40 Fig. 1 28-40 Fig. 1 28-40 Fig. 1 28-40 Fig. 1
- Optimized for snubberless turn-off
- Contact factory for series connection * at 2000 A
Reverse conducting IGCTs Part number
5SHX 26L4520 GCT Diode part
5SHX 19L6020 GCT Diode part 5SHX 36L4520** New Diode part 5SHX 36L4521** New Diode part
rT /rF V VmΩ
VGIN Outline °C K/kW kN V
IGCTS – INTEGRATED GATECOMMUTATED THYRISTORS
47
VDRM VDC VRRM
V V
4500 2800 4500 2800 4500 2800 4500 2800 4500 2800 4500 2800 5500 3300 6500 4000
A kA kA
1700 50 32 2100 56 35 1430 39 28 1870 50 33 2660 – 36 2260 – 32,5 1290 40 26 1290 40 26
ITGQM ITAVM /IFAVM ITSM/IFSM
VV
2.70 1.40
2.00 1.15 2.60* 1.70 2.35 1.22 2.30 1.11 2.95 1.29 4.10 1.66 4.10 1.88
mΩ °C K/kW K/kW kN
- Monolithically integrated free-wheeling diode optimized for snubberless turn-off Please refer to page 60 for part numbering structure.
**Contact factory
Fig. 1
Dimensions in mm
For all asymmetric and reverse conducting IGCTs, Hitachi ABB Power Grids offers matching free- wheeling, neutral point (NPC) and clamp diodes.
VDC
VT /VF VT0 V/F0 TVJM TVJM
TVJM RthJC
Fm
VDRM VVA
TC = 85 °C A
1010 390 840 340 1040 730 1280 910
10 ms TVJM
kA
17.0 10.6 18.0
7.7 15.0
20.0 20.0
4500 2800 2200 5500 3300 1800 4500 2800 3600 4500 2800 3600
2.95 1.80 0.53 13 28-40 5.40 2.70 1.24 125 26 44 28-40 3.45 1.90 0.90 13 28-40 6.40 2.70 2.23 125 26 44 28-40 2.70 1.59 0.74 125 11 28-40 3.60 1.88 1.15 125 14 44 28-40 2.00 1.24 0.51 125 11 28-40 2.60 1.46 0.76 125 14 44 28-40
Fig. 1 Fig. 1 Fig. 1 Fig. 1 Fig. 1 Fig. 1 Fig. 1 Fig. 1
Fast recovery diode recommendation
The actual choice of the diode depends on the specific application. Please see application note 5SYA 2064, Applying fast recovery diodes, on www.hitachiabb-powergrids.com/semiconductors.
10 ms TVJM
4000 A TVJM TVJM TVJM
0.33 125 0.21 125 0.45 125 0.28 125
0.297 125 0.414 125 0.62 125 0.56 125
8.5 3 8.5 3 8.5 3 8.5 3 6.8 2.2 6.8 2.2 8.5 3 8.5 3
40 40 40 40 60 60 40 40