Page 59 - kV-kA ABB_Broschure_Power_Semiconductors_2021_EN
P. 59
IGBT and diode modules
Product group
5SF = SiC MOSFET 5SJ = BIGT
5SL = Diode
5SM = IGBT
5SN = IGBT and diode
Configuration
A = Single device (can include diode) D = Dual switch in one package
E = Chopper, switch on low side
G = Phase leg
Nominal collector current rating (A)
Housing
A = RoadPak A-Sample
5SN D 0800 M 17 0 1 00
B =
E =
G =
H =
J =
K =
L =
M = HiPak1, 30 mm
N1 & N2 = HiPak1, 40 mm P = HiPak0
RoadPak B-Sample HiPak2, 40 mm HiPak2 HV, 44 mm Press-pack
HiPak1 HV, 44 mm Press-pack Press-pack
PART NUMBERING STRUCTURE
59
Q = 62Pak
R = LoPak1 (thermal paste/TIM) S = LoPak3
X = LinPak
Blocking voltage (V/100) Package variation
0 = Standard
Technology variation
1 = SPT / 3 = SPT+ and SPT++ / 4 = TSPT+ (Enhanced trench cell technology)
Version number