Page 104 - NEW Armstrong Book - 2

Modeling and Validation of SiC Power Modules
By Maurizio Di Paolo Emilio
raditional silicon power transistors have been pushed to their theoretical limits,1, 2 but those limita- tions in efficiency, density, and operating tempera-
ture can be overcome when systems are instead based on wide-bandgap, silicon carbide devices.3 The higher bandgap energy of SiC results in a higher ratio of blocking voltage to on-state resistance,4 enabling SiC-based converters to be more efficient than Si-based converters at higher voltage lev- els. SiC MOSFETs have been demonstrated for applications at medium-voltage (MV) levels, i.e., 2 to 10 kV,5 which histor- ically have been the domain of Si IGBTs. It has further been observed that SiC MOSFETs can perform transitions much faster than Si IGBTs.1 SiC MOSFETs are already known to be suited for power-electronics designs in naval ships, energy storage systems, and high-speed rail transport.6,7,8
This article serves as an introduction to a computationally proficient MV SiC MOSFET model that is executed in LTspice. This single-gadget model is utilized to carry out a modeling for the XHV-7, a 6.5-kV SiC MOSFET half-connect module
SiC MOSFETs have been demonstrated for applications at MV levels, which historically have been the domain of Si IGBTs.
developed by Cree/Wolfspeed.1 Verification of the model is performed by contrasting the model yield with observational waveforms from a double-pulse heartbeat test (DPT) across a scope of working conditions up to the module appraisals. The model described is intended to address the lack of gen- erally accessible SPICE models for MV SiC MOSFET modules. The original article can be found at bit.ly/3Bt60bv.
MV SiC MOSFET model
A delicate balance is observed between the complexity of computation and accuracy of simulation through power
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