Page 10 - kV-kA ABB_Broschure_Power_Semiconductors_2021_EN

10 PRODUCT CATALOG POWER SEMICONDUCTORS
IGBT and diode dies
When looking for chipsets featuring highest switching performance, ruggedness and reliability, Hitachi ABB Power Grids’ IGBT chips with accompanying diodes are certainly the preferred choice.
Diode dies
Part number
1.2 kV
5SLY 76E1200 5SLY 86E1200
5SLY 76F1200 5SLY 86F1200
5SLY 76G1200 5SLY 86G1200
5SLY 76J1200 5SLY 86J1200
Hitachi ABB Power Grids’ SPT (Soft Punch Through) chipsets and their improved versions with lower losses (SPT+ and SPT++) are available at 1200 V and 1700 V. They feature highest output power per rated ampere due to a moderate chip shrinkage and thus larger die area compared to others.
Typical applications for 1200 V are power con- verters for industrial drives, solar energy, battery backup systems (UPS) and electrical vehicles. Applications for 1700 V also include industrial power conversion & drives, wind turbines and traction con- verters.
Hitachi ABB Power Grids’ 1700 V SPT++ chipset is the world’s first 1700 V chipset that offers an operational junction temperature of up to 175 °C. This allows the module designer to increase the power density of the IGBT modules significantly.
Type
Size A x B mm
Thickness μm
VPRM (V)
IF (A)
VF (V) typ. 125 °C
Max. dies per wafer (W) or tray (T)
SPT+
6.3 x 6.3
350
1200
50
1.85
361 (W)
SPT+
7.4 x 7.4
350
1200
75
1.85
257 (W)
SPT+
8.4 x 8.4
350
1200
100
1.85
198 (W)
SPT+
10.0 x 10.0
350
1200
150
1.85
137 (W)