Page 11 - kV-kA ABB_Broschure_Power_Semiconductors_2021_EN
P. 11
IGBT AND DIODE DIES 11
Type
Size A x B mm
Thickness μm
VPRM (V)
IF (A)
VF (V) typ. 125 °C
Max. dies per wafer (W) or tray (T)
SPT++/FSA
6.6 x 6.6
370
1700
50
1.75
326 (W)
SPT+
6.6 x 6.6
390
1700
50
2.1
326 (W)
SPT++/FSA
7.7 x 7.7
370
1700
75
1.75
237 (W)
SPT+
7.7 x 7.7
390
1700
75
2.1
237 (W)
SPT+
8.6 x 8.6
390
1700
100
2.1
188 (W)
SPT++/FSA
6.8 x 11.4
370
1700
100
1.75
177 (W)
SPT++/FSA
10.2 x 10.2
370
1700
150
1.75
131 (W)
SPT+
10.2 x 10.2
390
1700
150
2.1
131 (W)
SPT++/FSA
9.3 x 15.9
370
1700
225
1.75
92 (W)
SPT+
13.6 x 13.6
390
1700
300
2.1
69 (W) 25 (T)
Part number
1.7 kV
5SLZ 76E1700 5SLY 86E1700 5SLZ 76F1700 5SLY 86F1700 5SLY 86G1700 5SLZ 76G1700 5SLZ 86J1700 5SLY 86J1700 5SLZ 76L1700
5SLY 86M1700 5SLY 12M1700
IGBT dies
Part number Type 1.2 kV
5SMY 76H1280
5SMY 86H1280 SPT+
5SMY 76J1280
5SMY 86J1280 SPT+
5SMY 76K1280
5SMY 86K1280 SPT+
5SMY 76M1280
5SMY 86M1280 SPT+
1.7 kV
5SMY 86G1721 SPT+ 5SMY 86J1722 SPT+
5SMY 76J1732
5SMY 86J1732 SPT+
5SMY 76K1722
5SMY 86K1722 SPT+
5SMY 76K1732
5SMY 86K1732 SPT++
5SMY 86L1731 SPT++
5SMY 86M1721 SPT+
5SMY 86M1730 SPT++
5SMY 86M1731 SPT++
5SMY 76P1730 SPT++
Please refer to page 58 for part numbering structure.
0101 02 Diode dies
02
IGBT dies
Size A x B mm
Thickness μm
VCES (V)
IC (A)
ICM (A)
VCEsat (V) typ. 125 °C
Max. dies per wafer (W) or tray (T)
9.1 x 9.1
140
1200
57
114
2.1
166 (W)
10.2 x 10.2
140
1200
75
150
2.1
130 (W)
11.2 x 11.9
140
1200
100
200
2.1
98 (W)
13.5 x 13.5
140
1200
150
300
2.2
71 (W)
8.6 x 8.6
209
1700
50
100
3.0
186 (W)
10 x 10
209
1700
75
150
3.0
132 (W)
10 x 10
190
1700
75
150
2.55
132 (W)
11.3 x 11.3
209
1700
100
200
3.0
104 (W)
11.3 x 11.3
190
1700
100
200
2.55
104 (W)
7.4 x 19.9
190
1700
120
240
2.7
86 (W)
13.6 x 13.6
209
1700
150
300
3.0
69 (W)
13.6 x 13.6
190
1700
150
300
2.55
69 (W)
13.9 x 14.0
190
1700
160
320
2.55
66 (W)
15.9 x 16.9
190
1700
225
450
2.55
46 (W)
