Page 569 - Fiber Optic Communications Fund
P. 569
550 Index
propagation constants, 48–50, 49, 54, 57–60, 60, Schottky barrier photodiode, 204, 204
75, 82 Schrödinger equation (linear), 460
pulse shaping, 139–41, 140 Schrödinger equation (nonlinear). See nonlinear
Schrödinger equation
QAM-16 systems, 392, 406 Schultz, P., 35
QAM-64 systems, 392–3, 414–5 self-phase modulation (SPM)
Q-factor, 303, 308–309, 311–3, 320–332 fiber dispersion/SPM combined effects, 433–4,
Q-PSK, 174–82, 175–80, 509, 509 433–6, 436
quadrature amplitude modulation, 178–82, 179–80 frequency components, 430–434, 431–3
peak nonlinear phase shift, 431–3
raised-cosine pulse, 183–4 peak power, 432, 436
Raman amplifiers phase noise, 477
anti-Stokes Raman scattering, 479 principles, 419, 430–436, 431–4, 436, 438–9
backward-pumping scheme, 286–7 soliton formation, 419, 433–6, 434–6
counter-propagating pump, 283, 283 variance calculations, 463–6
decay, 284, 286 semiconductor laser, 108
gain spectrum, 282, 283, 284–7, 285–6 semiconductor laser diodes
governing equations, 283–7, 285–6 active regions, 124, 125, 127, 128
Kerr effect, 481 active volume, 131
noise, 282, 287 distributed-feedback lasers, 132–3
nonlinear Schrodinger equation, 482 electron lifetime, 128–32
principles, 282–3, 282–3 energy density, 126–30, 130
Rayleigh back scattering, 287, 287–8 gain coefficient, 127–8
schematic, 283 heterojunction lasers, 124–5, 124–6, 128
signal, pump powers evolution, 283–4 laser rate equations, 126–8
spontaneous Raman scattering (SRS), 282 mirror loss, 129, 131
stimulated Raman scattering (SRS), 247, optical gain coefficient, 135
478–83, 479 optical intensity, 130
Stokes’s shift, 282, 479 photon lifetime, 128–32
time domain description, 481–3 principles, 124
rate equations radiative, non-radiative recombination, 126
EDFAs, 275–80, 279 rate equations steady-state solutions, 128–32,
lasers, 110–113, 126–8 130
steady-state solutions, 128–32, 130 stimulated emission, 129
Rayleigh back scattering, 287, 287–8 threshold current, 129, 131
Rayleigh scattering, 70, 71, 70–71 semiconductor optical amplifiers (SOAs)
RCE structures, 212–19, 215, 218–9 acquired phase, 270
rectangular pulse, 62–4, 62–4 AR coating, 270–271
reflection, 21–6 bandwidth, 266–7, 266–8
refraction, 21–6 carrier lifetime, 281
resonant cavity-enhanced (RCE) structures, cavity-type (Fabry–Perot), 264, 264–8, 266–7,
212–19, 215, 218–9 273, 296–8
Rician distribution, 362, 366 EDFA vs., 281
ruby laser, 108, 108, 274 free spectral range (FSR), 266
full-width at half-maximum (FWHM), 267
SAGCM APD, 211, 213 gain, 266–7, 266–8
SAM APD, 211, 212 gain coefficient, 281
