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NEW SDIP MODULES WITH FLEXIBLE INTERNAL TOPOLOGIES OFFER SMALLER FOOTPRINT AND LOWER COST THAN CONVENTIONAL MODULES OR DISCRETE SOLUTIONS.
the chip.2 The result is significantly faster di/dt speed and lower switching losses, with minimal cost differences to using the conventional packages.
The SDIP form factor enables a compact power module tar- geting medium-power applications such as on-board char- gers of EVs, solar inverters, energy storage systems, and uninterruptible power supplies. This module can integrate up to six SiC MOSFETs inside, with topology options including the H-bridge, three-phase bridges, and more. With a small footprint, insulated backside, and easy assembly process, these packages can enable simplified circuit board designs that are smaller and less expensive than would be achievable using multiple discrete devices or conventional modules.
Continuous SiC development drives
economies of scale
By continually investing in the research and development of SiC technologies, Rohm has been able to deliver SiC MOS and full SiC modules, as well as enable trench SiC MOS mass production. This constant evolution helps enable industry- leading performance and helps meet the growth in SiC
demand by driving down costs and leading to economies-of- scale benefits in substrate/wafer process capacity.
At Rohm, a key component was the increase in wafer diam- eter from 100 mm to 150 mm, plus investment in greater SiC capacity. The 2009 acquisition of SiCrystal, a SiC sub- strate supplier, helped Rohm establish a vertically inte- grated SiC production system with consistent quality and supply assurance.
The latest trends in EVs and industrial power electronics are moving toward higher-voltage and higher-frequency opera- tion. Greater competition in these applications is encourag- ing power system manufacturers to offer more compact and efficient power systems that don’t sacrifice reliability. SiC power devices are ideally suited to meet the needs of these growing industries by providing a sizable boost in power sys- tem performance.
Ming Su
is a technical marketing manager at Rohm Semiconductor.
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REFERENCES
1“New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance.” (June 17, 2020). Rohm Semiconductor. bit.ly/3zVEvX2
2M. Su & M. Van Ochten. (June 11, 2020). “Solving the Challenges of Driving SiC MOSFETs.” EE Times. bit.ly/396I9BH
ASPENCORE GUIDE TO SILICON CARBIDE