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FIGURE 3: ANPC TOPOLOGY IN AN EASY 3B POWER MODULE AND ITS MODULATION SCHEME
bining silicon- and SiC-based solid-state devices in the described way, the number of SiC devices is reduced to the optimized minimum, achieving an attractive cost- performance ratio.
Compared with a state-of-the-art IGBT inverter solution, similarly sized SiC MOSFET modules can handle substan-
tially more power. For example, an Infineon 950-V EasyPack 3B IGBT module,3 operating at 16 kHz, can be replaced by two smaller EasyPack 2B-sized 1,200-V CoolSiC modules,4 oper- ating at 32-kHz switching frequency. With a 32% increase in power-handling capability up to 139 kVA, this solution has almost 5% lower power-conversion losses per leg. This fur- ther improves the inverter efficiency by 0.3%.
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FIGURE 4: 950-V EASYPACK 3B IGBT SOLUTION SWITCHED AT 16 KHZ, VERSUS EASYPACK 2B COOLSiC MOSFET SOLUTION SWITCHED AT 32 KHZ ASPENCORE GUIDE TO SILICON CARBIDE