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                  NPP                                    Memory                                    335


                      performed, the  contents of cell  may  be   {dZmer (Destructive Read out) H$hVo h¢ & O¡go
                      erased. This type of cell is called destructive  DRAM H$s gob& Ÿbo{H$Z O~ n‹T>Zo Ho$ níMmV² gob
                      read-out cell. For example, dynamic RAM
                      cells. On the other hand, if the contents are  H$s OmZH$mar ~Zr ahVr h¡, Vmo Bgo A{dZmer n‹T>Zm
                      not erased after  a  read operation, this is  (Non-destructive Readout)  H$hVo h¢Ÿ&  O¡go
                      called a non-destructive read-out.  For     SRAM `m ROM H$s gob Ÿd gmar Mwå~H$s` _o_moar
                      example, static RAM or ROM cells.           H$s gob ^r A{dZmer n‹T>Zo `mo½` hmoVr h¡Ÿ&
                  5.  Read  Only Cell  or Read-  Write Cell: If  5. arS> AmoZbr `m arS>-amBQ> gob: `{X gob _| go
                      only read operation can be performed, the   {g\©$ n‹T>m Om gH$Vm h¡ Vmo Bgo arS> AmoZbr gob
                      cell is called read-only cell. For example, a  H$hVo  h¢Ÿ& O¡go,  ROM H$s gobŸ& O~ n‹T>Zm d
                      cell in ROM is a read-only cell. If both read
                      and write operation can be performed, the   {bIZm XmoZm| gå^d hmo Vmo Bgo arS>-amBQ> gob H$hVo
                      cell is called read-write cell. For example,  h¢Ÿ& O¡go, RAM H$s gobŸ&
                      a cell in RAM.
                  Representation of a Memory Cell             _o_moar gob H$m à{V{Z{YËd
                      The memory cell is a fundamental memory     `h EH$ _yb^yV _o_moar VËd h¡ Š`m|{H$ Bg_| EH$ hr
                  element because it is used to store a bit. It may be  {~Q> g§J«hrV hmoVr h¡& Bgo h_ ~mBZar gob H$hVo h¢ Š`m|{H$
                  called as binary cell because it has only two states
                  0 and 1. The cell can be represented as below:  0 `m  1 Xmo  hr AdñWmE± Bg_|  hmo gH$Vr  h¢Ÿ& Bgo
                                                              {MÌmZwgma Xem©`m Om gH$Vm h¡:


                                                                      D
                                                   Write


                                                               Memory
                                                                Cell


                                                    read



                                                                    Q
                      Here, D is the input bit. It will be stored in  `hm± na D EH$ BZnwQ> {~Q> h¡ d Q gob go {b`m
                  the cell only when write = 1. The information  OmZo dmbm AmCQ>nwQ> h¡Ÿ& BZnwQ> D gob _| V^r OmEJm
                  stored in the cell can be obtained at output Q  O~ write = 1 hmoŸ& gob _| g§J«{hV OmZH$mar Q na V^r
                  only when control line read = 1.
                                                              n‹T>r OmEJr O~ read = 1 h¡Ÿ&
                      Thus, Read and Write are Control Signals.   AV…, Read d Write H§$Q´>mob {g½Zb h¡& D BZnwQ>
                  D is input signal and Q is output signal.   {g½Zb VWm Q AmD$Q>nwQ> {g½Zb h¡&
                   4.2 Memory                                 4.2 _o_moar
                      Memory is part of the computer used to      ‘o‘moar H$åß`yQ>a H$m dh {hñgm hmoVm h¡, Omo àmoJ«m_
                  store programs and data. There are two types  d S>mQ>m g§J«hU Ho$ H$m_ _| AmVm h¡Ÿ& _w»`V: Xmo àH$ma
                  of memory:
                                                              H$s _o_moar hmoVr h¢ …
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