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                      Masted ROMs are extensively used in em-     BZH$mo _mBH«$moH§$Q´>moba  Ho$ gmW  Eå~oS>oS> {Z`§ÌU
                  bedded control systems in which a permanent  àUmbr _| Cn`moJ _| bm`m OmVm h¡ & Eogo AZwà`moJm| _|
                  program resides in the ROM. The program need  gm_mÝV`m àmoJ«m_ N>moQ>m d pñWa hmoVm h¡ & Bg{bE Bgo
                  not be modified.  Therefore, masked-ROM is  masked-ROM _| aI {X`m OmVm h¡ & Eogr masked-
                  referred to as “Program Memory”.            ROM ""àmoJ««m_ _o_moar'" H$hbmVr h¡ &
                      Masked ROMs are produced by making a        BÝh| ~ZmZo Ho$ {bE nhbo EH$ _mñH$ V¡`ma H$a {b`m
                  mask for the circuit. A mask is a photographic  OmVm h¡Ÿ& `h _mñH$ n[anW H$m \$moQ>moJ«m{\$H$ Q>oåßboQ> hmoVm
                  template of the  circuit.  A  masked-ROM con-
                  tains many diodes as a link. Presence of diode  h¡ & EH$ _mñŠS> ROM EH$ qbH$ Ho$ ê$n _o| H$B© S>m`moS²>g
                  shows a ‘1’ and absence of diode shows a ‘0’.  hmoVo h¢Ÿ& S>m`moS²>g H$s CnpñW{V ‘1’ VWm AZwnpñW{V ‘0’
                  The diodes  are manufactured  using Bipolar  Xem©Vr h¡Ÿ&  ~m`nmoba Q´>mpÝOñQ>g©  `m  MOSFETs H$m
                  Transistors or MOSFETs.                     Cn`moJ H$aHo$ S>m`moS²>g ~Zm`o OmVo h¢Ÿ&
                  PROM (Programmable ROM)                     PROM (àmoJ«m_o~b ROM)
                      PROM chip comes blank from the factory.     PROM {Mn \o$ŠQ´>r go Imbr AmVr h¡ Ÿ& Bg_| ~hþV
                  It contains diodes as  fusible links. A program  gmao S>m`moS> hmooVo h¢, {OZH$mo Amdí`H$VmZwgma â`yO {H$`m
                  can be written by a device called PROM pro-  Om gH$Vm h¡ Ÿ& Ohm± S>m`moS> ahoJm, dhm± 1 hmoJm AÝ`Wm
                  grammer. This device provides heavy current  0 hmoJm Ÿ& EH$ CnH$aU `h H$m`© H$aVm h¡ {Ogo PROM
                  for fusing a  link.  But once  the  program  is  àmoJ«m_a H$hVo h¢ Ÿ& `h CÀM Ymam àXmZ H$aHo$ S>m`moS>
                  written it cannot be erased. It is similar to your  H$mo â`yO H$a XoVm h¡ & bo{H$Z EH$ ~ma àmoJ«m_ {bIZo
                  note-book in which you write with a dot Pen.  Ho$ níMmV² Bgo hQ>m`m Zht Om gH$Vm h¡Ÿ& `o AmnH$s H$m°nr
                  It comes  blank from the factory.   Once  you  Ho$ g_mZ hmoVr h¡, {OZ_| Amn noZ go {bIVo h¢Ÿ& `o \o$ŠQ´>r
                  write with a dot pen,  it cannot be erased.  go Imbr AmVr h¡Ÿ& Amn EH$ ~ma hr Bg_| Hw$N> {bI
                                                              gH$Vo h¢ Ÿ& BgHo$ ~mX {g\©$ n‹T> gH$Vo h¢Ÿ&
                  EPROM (Erabsable PROM)                      EPROM (BaoOo~c àmo_)
                      EPROM is  made  up  of  MOSFET cells in     Bg àH$ma H$s _o_moar _| Amdoe Ho$ ê$n _| OmZH$mar
                  which the information is stored in the form of  hmoVr h¡Ÿ& `h Amdoe MOSFET H$s gob _| hmoVm h¡Ÿ& `o
                  charge.  EPROM also comes blank  from the
                  factory. It can be programmed by a device called  ^r  \o$ŠQ´>r go Imbr  AmVr h¡  bo{H$Z EH$ CnH$aU,
                  EPROM Programmer. This device uses much     EPROM àmoJ«m_a H$s ghm`Vm go Bg_| àmoJ«m_ {bI
                  higher  voltages than the normal operating  gH$Vo h¢Ÿ& ¶h CnH$aU gm‘mݶ Am°naoqQ>J dmoëQ>oO H$s
                  voltages. Thus, EPROM is programmable
                  electrically. But if we want to erase the contents  Anojm A{YH$ hm¶a dmoëQ>oO Cn¶moJ H$aVm h¡& `{X BgHo$
                  of EPROM, an Ultraviolet light source is put for  àmoJ«m_ H$mo hQ>mZm h¡, Vmo nam~¢JZr {H$aUm| H$mo H$ar~ 20
                  20  minutes.  An Intense UV light  erases the  {_ZQ> VH$ Bg na S>mbVo h¡Ÿ& Bggo gmam Amdoe brH$
                  charge. Thus the EPROM is ready for the next  hmo OmVm h¡& A~ Bg EPROM H$s {Mn _| Z`m àmoJ«m_
                  program. This chip is anologous to your note-
                  book in which you write with a pencil. You can  {bIm Om gH$Vm h¡Ÿ& `o AmnH$s H$m°nr Ho$ g_mZ hmoVo h¢
                  erase the contents of a page with a rubber and  {Og_| Amn n|{gb go {bIVo h¢Ÿ& Bgo ~ma-~ma {_Q>mH$a
                  new poem can be written each time.          Hw$N> Z`m {bI gH$Vo h¢&
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