Page 263 - Fiber Optic Communications Fund

244 Fiber Optic Communications

and for electrons: = 55 Å, = 100 Å, E i,e = 0.682 eV, and for holes: = 56 Å, = 112 Å, and
o
h
o
e
5
2
5
E i,h = 1.2eV, plot the ionization coefficients versus 1∕F for F between 10 V/cm and 4 × 10 V/cm.
5.17 Explain the different types of noise mechanism in a pin receiver.
5.18 Explain the differences between homodyne and heterodyne coherent receivers. Which of these
receivers requires a larger bandwidth?

References
[1] M.J. Deen and P.K. Basu, Silicon Photonics – Fundamentals and Devices. John Wiley & Sons, New York, 2012.
[2] A. Bandyopadhyay and M.J. Deen. In H.S. Nalwa (ed.), Photodetectors and Fiber Optics. Academic Press, New
York, pp. 307–368, 2001.
[3] G.P. Agrawal, Fiber-Optic Communication System, 4th edn. John Wiley & Sons, Hoboken, NJ, 2010.
[4] G. Keiser, Optical Fiber Optic Communications, 4th edn. McGraw-Hill, New York, p. 688, 2010.
[5] J. Burm et al., IEEE Photon. Technol. Lett.,vol. 6, p. 722, 1994.
[6] Y.-G. Wey et al., IEEE J. Lightwave Technol.,vol. 13, p. 1490, 1995.
[7] K.S. Giboney et al., IEEE Photon. Technol. Lett.,vol. 7, p. 412, 1995.
[8] Y.C. Lim and R.A. Moore, IEEE Trans. Electron Dev.,vol. 15, p. 173, 1968.
[9] D.P. Prakash et al., IEEE Photon. Technol. Lett.,vol. 9, p. 800, 1997.
[10] Z. Bielecki, IEEE Proc.-Optoelectron.,vol. 147, p. 234, 2000.
[11] M.A. Itzler et al., Optical Fiber Communication Conference, vol. 4, p. 126, 2000.
[12] A.H. Gnauck, C.A. Burrus, and D.T. Ekholm, IEEE Photon. Technol. Lett.,vol. 4, p. 468, 1992.
[13] T.Y. Yun et al., IEEE Photon. Technol. Lett.,vol. 8, p. 1232, 1996.
[14] A. Torres-J and E.A. Gutiérrez-D, IEEE Electron Dev. Lett.,vol. 18, p. 568, 1997.
[15] A.G. Chynoweth, Semiconductors and Semimetals, Vol. 4. Academic Press, New York, 1968.
[16] G.E. Stillman and C.M. Wolfe, Semiconductor and Semimetals, Vol. 12. Academic Press, New York, 1977.
[17] Y. Okuto and C.R. Crowell, Phys. Rev. B,vol. 6, p. 3076, 1972.
[18] F. Capasso, Semiconductors and Semimetals, Vol. 22D. Academic Press, New York, 1985.
[19] Y. Okuto and C.R. Crowell, Phys. Rev. B,vol. 10, p. 4284, 1974.
[20] G.A. Baraff, Phys. Rev.,vol. 128, p. 2507, 1962; vol. 133, p. A26, 1964.
[21] C.L.F. Ma, M.J. Deen, and L. Tarof, Adv. Imag. Electron Phys.,vol. 99, p. 65, 1998.
[22] M. Casalino et al., Physica E: Low-dimensional Systems and Nanostructures, Proceedings of the E-MRS 2008
Symposium C: Frontiers in Silicon-Based Photonics, Vol. 41, p. 1097, 2009.
[23] C. Li et al., J. Appl. Phys.,vol. 92, p. 1718, 2002.
[24] M. Ghioni et al., IEEE Trans. Electron Dev.,vol. 43, p. 1054, 1996.
[25] N.R. Das and M.J. Deen, J. Vac. Sci. Technol. A,vol. 20, p. 1105, 2002.
[26] N.R. Das and M.J. Deen, IEEE J. Quant. Electron.,vol. 37, p. 1574, 2001.
[27] N.R. Das and M.J. Deen, IEEE J. Quant. Electron.,vol. 37, p. 69, 2001.
[28] G. Kinsey et al., IEEE Photon. Technol. Lett.,vol. 10, p. 1142, 1998.
[29] R.G. Decorby, A.J.P. Hnatiw, and G. Hillier, IEEE Photon. Technol. Lett.,vol. 11, p. 1165, 1999.
[30] H. Nie et al., IEEE Photon. Technol. Lett.,vol. 10, p. 409, 1998.
[31] C. Lenox et al., IEEE Photon. Technol. Lett.,vol. 11, p. 1162, 1999.
[32] M.S. Ünlü and S. Strite, J. Appl. Phys.,vol. 78, p. 607, 1995.
[33] H.H. Tung and C.P. Lee, IEEE J. Quant. Electron.,vol. 33, p. 753, 1997.
[34] J.A. Jervase and Y. Zebda, IEEE J. Quant. Electron.,vol. 34, p. 1129, 1998.
[35] A. Umbach, M. Leone, and G. Unterbrsch, J. Appl. Phys.,vol. 81, p. 2511, 1997.
[36] L. Giraaudet et al., IEEE Photon. Technol. Lett.,vol. 11, p. 111, 1999.
[37] K. Kato, IEEE Trans. Microw. Theory Tech.,vol. 47, p. 1265, 1999.
[38] C.L. Ho et al., IEEE J. Quant. Electron.,vol. 36, p. 333, 2000.