Page 58 - PR 2014 2016 10 Materials and Nanotechnology
P. 58

334   Materials and Nanotechnology | Progress Report




































                                                                                             Figure 68. Structure
                                                                                                  o CdSiO :Pr ,
                                                                                                         3+
                                                                                                      3
                                                                                               Emission spectra
                                                                                                and mechanism
                                                                                                  of persistent
                                                                                               luminescence of
                                                                                              CdSiO :Pr  excited
                                                                                                    3+
                                                                                                  3
                                                                                               by UV radiation.

               of one and three traps for the combustion and   between the band gap (Eg) value obtained from
               solid state prepared materials, respectively, the   the synchrotron radiation excitation spectra
               method of preparation has a significant influ-  and the DFT calculation was deduced to results
               ence on the defect structure of the materials.   from the covalent bonding in the BaAl O  host.
                                                                                                  2  4
                                3+
                           2+
               BaAl O  : Eu  , TR  and CdSiO : TR  materials    The XANES spectroscopy showed a predomi-
                                                3+
                    2  4                    3
               were investigated by absorption spectroscopy   nance of Eu  which can be present as a result
                                                                         3+
               in the infrared, scanning electron microscopy ,   of the in situ conditions of persistent lumines-
               absorption spectroscopy, X-ray structure were   cence during the X-ray irradiation (Figure 68).
               studied by absorption of X-rays near the edge-
               XANES absorption fine structure and X-ray ex-  Multiferroic properties in rare earth doped
               tended - EXAFS  other than electron excitation   oxide thin films
               and emission spectroscopy in the regions of UV
               and vacuum - UV- vis and thermoluminescence.   For the last few decades, the consumption of
               It was also investigate the photoluminescence   electronic devices and the high demand for
               properties of their excitation and emission    data storage have shown great opportunities
               spectra, the lifetime of excited states and the   to create modern technologies that assure the
               positions of the ground states of the ions TR 2+/3+    worldwide needs in computing development.
               in the Band Gap. Mechanisms were discussed     Some multiferroic materials have been exten-
               for the persistent luminescence phenomenon     sively studied. The BiFeO  is considered the
                                                                                       3
               of Eu  ion doped in BaAl O  matrix and TR      only one that has at least two ferroic at room
                    2+
                                                         3+
                                        2  4
               ions doped in CdSiO  matrix. The mismatch      temperature, so that it has received special
                                   3


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