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Expect more
from a leading
global supplier
Precision abrasives and chemicals for
machining and and finishing
high-value materials
Silicon Carbide crystals grown by Chemetall Precision Microchemicals
bulk and epitaxial processes are (a business unit of BASF) based in
prone to a variety of defects such Fremont, California, USA in the
as micropipes and dislocations. heart of Silicon Valley has developed
Growth processes have improved a range of abrasive and chemical
significantly during recent years but products for all stages of machining
imperfections in bulk SiC ingots and and finishing SiC wafers and
epitaxially grown material are not other high value Wide Band Gap
yet completely eliminated nor their Semiconductor (WBGS) materials.
implications in device performance
fully understood. In the case of bulk Our emphasis is on the development
growth, SiC ingots are carefully and production of precision
analyzed and defect sites flagged. consumables to provide best-in-class Sabre Micropol AF — Polished C Face (Ra=0.22 nm)
After wire sawing, SiC wafers are products resulting in maximum wafer
lapped and polished to remove saw yields. The company has focused
damage and sub-surface damage. primarily on Chemo-Mechanical
Wafers destined for Power and RF Polishing (CMP) slurries to deliver
device fabrication must undergo near-perfect surfaces on N-type
Chemo-Mechanical Polishing (CMP) and Semi-Insulating SiC wafers.
to improve surface finish and by The CMP steps utilizing our Sabre
this stage, the raw wafers are Micropol CS and AF slurries are
extremely valuable. critical as the resulting surfaces
determine epitaxial deposition
efficacy and ultimately device yield.
Sabre Micropol AF — Polished Si Face (Ra=0.41 nm)
SABRE SABRE
®
®
MircoPol AF MircoPol CS
C Face Removal Rate 0.93 micron/hr 1.2 micron/hr
Roughness 0.22 nm .41 nm
Si Face Removal Rate 0.15 micron/hr .29 micron/hr
Roughness 0.41 nm .58 nm
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