Page 51 - May

NEW TECHNOLOGY

Table 3. Characteristics of the installation for microplasma treatment.
Power consumption, kW 0.5
Mains supply voltage, V 220

Limits of step current regulation, A 10 – 20
Working voltage, no more than V 14
Argon consumption, no more, l / min 1.5
Autonomous cooling system volume, l 4

Overall dimensions of the microplasmatron, (diameter x length), (8 – 16) Х (50 –
mm 250)
Overall dimensions, mm 500 Х 450 Х 250
Installation weight, kg 25

The arc discharge and the atmospheric
plasma jet formed by it are used in the
technology of tubeless chemical deposition
of thin-film diamond-like coatings at
atmospheric pressure using volatile liquid
organoelement compounds and gaseous
media with simultaneous activation of the
surface by electric arc plasma. At the same
time, the complex use of the arc discharge
as a source of thermal energy for heating
and decomposition of introduced chemical
compounds, a source of charged particles
for the effective passage of plasma-chemical
reactions in a plasma-chemical reactor and
their simultaneous effect on the substrate Fig. 10. Installation for microplasma treatment.
(plasma activation) is provided. The novelty
of this process lies in the absence of the use of
closed chambers, low heating temperatures of products in the process of deposition of coatings
and the use of flexibly controlled electric arc plasma. Due to the fact that the application of
coatings on products occurs at the final stage of their manufacture or immediately before their
use, this process is called final plasma hardening (FPU). The main advantages of FPU are:
implementation of the process without vacuum and chambers; minimum heating of products,
not exceeding 2000 °С; the ability to apply coatings locally, in hard-to-reach areas and on
products of any size; the use of small-sized, mobile and cost-effective equipment (Fig. 11). The
basic principle of applying thin-film wear-resistant coatings based on the FPU technology is the
decomposition of vapors of liquid organoelement preparations, which are introduced into the

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