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196                                                               Fiber Optic Communications


            through the photodiode is
                                            P =(1 − R )P exp (−W),                          (5.12)
                                                         I
                                                      p
                                             tr
            where  is the absorption coefficient and W is the thickness of the depletion or active region of the photode-
            tector. Therefore, the power absorbed in the photodiode is
                                  P abs  =(1 − R )P − P =(1 − R )P [1 − exp (−W)].          (5.13)
                                                               I
                                                   tr
                                               I
                                                            p
                                             p
              From Eq. (5.7), we find that the mean number of photons absorbed per unit time, or photon absorption
            rate,is P  ∕(hf ).If a photon is absorbed, an electron–hole pair is generated. Therefore, the number of
                    abs  0
            electron-hole pairs generated per unit time is
                                                  N      P
                                                    PC    abs
                                                       =    .                                 (5.14)
                                                    T    hf 0
            Using Eqs. (5.14) and (5.13) in Eq. (5.10), we find
                                               P abs 
                                            =
                                                P I
                                            =(1 − R )[1 − exp (−W)].                      (5.15)
                                                   p
            The quantum efficiency is equal to a product of:

            1. the power transmission coefficient at the air–semiconductor interface, 1 − R ;
                                                                            p
            2. the photons absorbed in the active region of thickness W, given by the term 1 − exp (−W); and
            3. the fraction of photocarriers  that reach the device terminal and contribute to the measured photocurrent.

            The third term is usually the most difficult to determine as it depends on a number of factors, such as carrier
            lifetimes, transit paths, surface properties, and the physical dimensions of the device.



            Example 5.1
            If the incident optical signal on a pn photodiode is at a wavelength of 550 nm, its absorption coefficient  =
                  −1
              4
            10 cm , width of the active region W = 3 μm, and optical power 1 nW, calculate (a) the photon incidence
            rate, (b) the photon absorption rate, and, (c) the quantum efficiency. Assume R = 0 and  = 0.9.
                                                                           p
            Solution:
            (a) The energy of a photon is
                                                  hc          −19
                                             E ph  =  = 3.6 × 10  J.
                                                   0
            The photon incidence rate is given by Eq. (5.8),

                                                 P I  1 × 10 −9  W
                                        R incident  =  =        photons/s
                                                E ph  3.6 × 10 −19
                                                        9
                                              = 2.77 × 10 photons/s.
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