Page 769 - Mechatronics with Experiments
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LABORATORY EXPERIMENTS  755
                                                                   V
                                                                    s


                                                             R     D
                                                              2
                                                      C        i
                                                               c
                                A      R 1  B
                             V
                              in
                                      i
                                       B
                                                       E
                                                                         FIGURE 11.5: Circuit of a voltage
                                                                         amplifier using a transistor in a
                                                                         common emitter configuration.


                                  The relationships between electrical variables (voltages and currents) and electri-
                             cal parameters (resistance, transistor parameters) can be shown as follows (Figure 11.5).
                             Kirchoff’s voltage law between base (B) and emitter (E) indicates
                                                          V = V   + V                          (11.22)
                                                           in   AB   BE
                                                             = R ⋅ i + V                       (11.23)
                                                                1  B   BE
                             where V   = V  = 0.6V to 0.8 V range. V  is the forward bias voltage between base
                                    BE    FB                     FB
                             and emitter and it can be up to 0.6V to 0.8 V range typically. This value is a property of a
                             transistor and is given in the datasheet of the transistor. If V is so small that that V  < V ,
                                                                           in                BE    FB
                             then no current flows at the base i = 0 and the transistor is in the cutoff (OFF state) mode.
                                                        B
                             Similarly, applying Kirchoff’s voltage law on the output side of the transistor, and noting
                             that the transistor acts as a current amplifier between its fully OFF (cutoff) and fully ON
                             states (saturation). The current gain (  ) is a property of the transistor and provided in its
                             datasheet. There can be variations in that gain up to 100% due to manufacturing variations.
                             Robust circuit designs should not rely on the exact value of the current gain of the transistor.
                                               i =    ⋅ i B                                    (11.24)
                                               C
                                               V = V DC  + V CE                                (11.25)
                                                s
                                                 = R ⋅ i + V CE                                (11.26)
                                                    2
                                                       C
                                                 = R ⋅ (   ⋅ i ) + V CE                        (11.27)
                                                          B
                                                    2
                                                        (         )
                                                          V − V FB
                                                           in
                                               V = R ⋅              + V  ; for V ≥ V           (11.28)
                                                s   2                  CE      in  FB
                                                            R
                                                              1
                                                       (      )
                                                         R ⋅   
                                                          2
                                             V CE  = V −        ⋅ (V − V )                     (11.29)
                                                                       FB
                                                                   in
                                                    s
                                                          R 1
                                             V   = V − V                                       (11.30)
                                              DC    s   CE
                                                   (     )
                                                     R ⋅   
                                                      2
                                                 =          ⋅ (V − V )                         (11.31)
                                                                   FB
                                                              in
                                                      R
                                                       1
                             Notice that V CE  can be between maximum value of V (when i = 0for i = 0 when V <
                                                                                       B
                                                                               C
                                                                                                  in
                                                                       s
                             V ), transistor is in cutoff (OFF) mode), and minimum value of about V CE,min  = 0.2V
                               FB
                             (when the transistor is saturated, fully ON) which is a property of the particular transistor.
                                  We can measure the two input voltage values of interest: first, the minimum input
                             voltage necessary to start making the transistor conduct, V in,min . For input voltages below
                             that the transistor will not conduct (OFF). Second, the value of the input voltage for which
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