Page 7 - Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon

Jpn. J. Appl. Phys., Vol. 46, No. 10A (2007) J. CHEN and T. SEKIGUCHI

0° (Σ1) 0.4° 1° 3°
(a) (c) (e) (g)
EBIC_300 K

(b) (d) (f) (h)
EBIC_100 K

50 µm

Fig. 6. EBIC images of artificial SA-GBs in bonded Si with tilt angles of 0, 0.4, 1, and 3 .

(a) (b)

Fig. 7. Variation of EBIC contrast (300 and 100 K) of artificial SA-GBs with tilt angle.

0° 0.4°

1° 3°

Fig. 8. TEM images of artificial SA-GBs in bonded Si with tilt angles of 0, 0.4, 1, and 3 .
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