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288                                                                Chapter 6



        more) while its thickness is about twice the gap width. Since the carrying energy is divided
        between two gaps the Ohmic loss is lower and power handling is higher than in conventional
        slotline.

        q) A Grounded CPW (GCPW) is used on PCB as an alternative to microstrip line and behaves
        mainly like microstrip. Due to vias connecting the ground planes, GCPW less radiates and
        provides better isolation between adjacent lines than conventional microstrip. As a result, the
        denser PCB can be fabricated. Since the biggest share of EM energy concentrates in dielectric,
        GCPW is a low dispersive line. The Ohmic loss and power handling are similar to CPW.
        r) and s) The first images illustrate how the fence of vias providing the Vertical Interconnect
        Access (VIA) helps minimize the crosstalk between adjacent lines and support the signal trace
        printed on a substrate of suspended stripline (see Figure 6.2.2d). Each via is a short metal rod
        or the hole that passes through the dielectric substrate and metal ground planes is metallized on
        the  inside  and provides the electric contact between the ground planes. In  the  case  of  the
        microstrip line, the individual metal pads next to trace are printed on the top of the substrate as
        shown in Figure 6.2.2s. In fact, it converts the microstrip line into GCPW. The rule of thumb
        recommends that the spacing between two adjacent vias in fence must be as minimum one-
        eighth of a wavelength in the dielectric. They also should be placed outside the field diameter
        defined earlier not to disturb an EM wave propagation in line. In multi-layer PCB, the vias are
        not only shielded the signal line traces but provide the electrical connections between layers.
        Choosing circuit materials (see Table 6.1) for high-frequency PCBs is a matter of weighing the
        electrical  performance  required by the end application against the ease or difficulty of
        fabricating circuits with those materials.
                                                                            Table 6.1

                                               Material                   Material
                                      ∗  Thermal   Electrical   Density
             Material             at 10   Cond.   Strength     g/cm
                                     
                                                                               3
                             
                                     GHz      [W/m/°]    [kV/cm]
         DuroidR/flex3700   2.0       20         0.5            -           2.0
                   5
              PTFE          2.1       1        0.1-0.25      200-600        2.17
            Duroid5880      2.2       12         0.26          40           2.2
             RO3003          3        10         0.5          1300          2.1
              Quartz        3.8      0.1          2          200-400        2.65
              TMM4          4.5       20         0.7           260          2.07
               FR-4       4.5-4.8    220         0.16          200          1.85
             RO3006         6.15      20         0.79          300          2.6
          Alumina 99.5%     9.9      1-2        30-37         4000          3.89
             RO3010         10.2      22         0.95           -           3.0
               InP          12.4      10          3            120          4.81
              GaAs         12.85      6          30            350          5.32
               TiO2       90, 170    2-50      7.4, 10.4     40 - 80        4.23





        5  Polytetrafluoroethylene (PTFE) is a well-known brand of which is "Teflon."
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