Page 10 - AtecomProductCatalogue

Customized your high quality wafers

Ga 2O 3 Gallium Oxide Wafer

Parameters Unit
Diameter 50.8±0.3 100±0.5 mm
Orientation <-201> <001> degree
Dopant/ Conductivity Sn / N Undoped / N Fe /Insulating Sn / N
10
Doping concentration 5E17~9E18 cm -3 <5E17 cm -3 R＞10 Ω・cm 1E18～ 2E19 cm -3
Thickness 650±20 um
Offset angle [010]:0±0.4 [010]:0±0.4 [010]:0 ±1 [010]:0±1 degree
FWHM [010]:≦150 [010]:≦150 [010]:≦150 [010]:≦350 arcsec
Surface SSP

Ga 2O 3 Eptixial wafer Unit
Diameter 50.8 ~ 100 (Ga2O3 wafer substrate) mm
Epi layer Type Ga 2 O 3 on Ga 2 O 3 GaN on Ga 2 O 3
Dopant/ Conductivity Si / N Si / N
Doping concentration 2E16 ~ 9E16 1E18 ~ 1E19 cm -3
Thickness 5 ~ 10 2 ~6 um

9