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Customized your high quality wafers
SiC Wafer
Parameters
Diameter 100mm 150mm
Polytype 4H-N: 0.015~0.028 / 4H-SI> 1E7
Thickness 350 ~ 500μm
TTV ≤ 15μm
MPD Grade ≤0.5~15 cm -2
SiC Epitaxial Wafer
Parameters
Diameter 100 ~ 150mm
Type / Dopant N / Nitrogen P / Aluminum
Uniformity ≤ 10% ≤ 20%
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Carrier Concentration 9 x 10 ~ 1 x 10 19 cm -3
Epi Thickness 0.2 ~ 50μm
SiC Shottky Diodes
Parameters
VR(Max) 650 V 1200 V 1700 V 3300 V
IF(Max) 3 ~ 100 A 2 ~ 50 A 5 ~ 15 A 0.6 ~ 50 A
VF(Max) ≤ 1.7 ~ 2.3 V
Tj(Max) -55 ~175°C
Package TO-220 / TO-247 / TO-252 / TO-263
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