Page 5 - AtecomProductCatalogue

ATEC M

Silicon Epitaxial Wafer

100mm~200mm wafer Epitaxial Layer Parameters

Epitaxial Layer Epitaxial Layer Thickness
Reactor Type Diameter Resistivity Uniformity
Resistivity Thickness Uniformity

0.004(B:0.01)-3Ω.cm ≤2.5%

Batch 100-200mm 3-30 Ω.cm ≤5% 3-100um ≤2.5%

>30 Ω.cm ≤1%

0.3-3 Ω.cm ≤5%
Single 150-200mm 0.1-20um ≤1%
3-30 Ω.cm ≤1.5%

300mm wafer Epitaxial Layer Parameters

Item Guarantee(Typical Value) Metorology Remark
Thickness Within From 0.5μm~60μm, Within
Wafer(WIW) <2.0%(max-min)/(max+min) FTIR 3mm EE
Thickness Wafer to Variation < 2.5% FTIR Calculated Using wafer
Wafer(WTW) Average(25pcs)Within 3mm
Resitivity Within <4.5% (max-min)/(max+min) Hg-CV From 0.1Ω.cm~100Ω.cm(N
Wafer(WIW) type or P type),Within 10mm
Resitivity Wafer to variation < 3.5% Hg-CV Calculated Using wafer
Wafer(WTW) Average(3pcs)Within 10mm
Free under nomarski microscope Nomarski Microscope or
Slip EE=3mm
<3ea under SP3 SP3(slip recipe)
Light Point Defects (LPDs) <50ea @0.09μm threshold, SP3 EE=3mm
(Defect Size) <20ea @0.12μm threshold
Light Area Defects (LADs) ≤6ea@0.3μm threshold SP3 EE=3mm
(Defect Size)
Stacking Fault ≤3ea Nomarski Microscope

Light Metal Means Na,K,AL,Ca
Metallic Via ICP-MS <1E10 atom/cm 2 ICP-MS
Othes Mean:Fe,Cr, Cu,NI,Zn
Bulk Iron via SPV <5E10 atoms/cm 3 SPV Processed On P- wafer.

Lifetime via SPV Avg >700μs , min >200μs SPV Processed On P- wafer.

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