Page 4 - AtecomProductCatalogue
P. 4
Customized your high quality wafers
Silicon Wafer
Wafer Specification
Parameter Specs
Diameter 76.2-300mm
Growth CZ / MCZ / CFZ / FZ / NTD
P-type Boron
Dopant
N-type Arsenic / Antimony / (Red) Phosphorus
Thickness 150~1500um, Customizable
Sufrace Ingot / As cut / Lapped / Etched / Polished
Float Zone FZ-Silicon Specification
Parameter Conduction Type Orientation Diameter(mm) Resistivity(Ω.cm)
High Resistivity >1000
Neutron Radiation P-type 30-800
N-type <100>&<111> 76.2-200
CFZ 1-50
Meteorological Adulteration 0.01-300
(Magnet) Czochralski MCZ / CZ -Silicon Specification
Parameter Dopant Orientation Diameter(mm) Resistivity(Ω.cm)
Light Dopant 1-100
P-type
N-type <100><110><111> 76.2-300
Heavy Dopant 0.0005-1
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