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Track Keynotes

TRACK 4: ENERGY CONVERSION & STORAGE

THURSDAY, AUGUST 31, 2017 9:15 am – 10:15 am
Room: Mason II, Second Floor

Session 7-4-1 Packaging Solutions to Enable High Power RF Gallium Nitride Products and Quinn Martin
Advanced Technologies MACOM

Biography
Quinn Martin received a BS degree in Manufacturing Engineering from Brigham Young
University (1998) and a Masters of Business Administration degree from Arizona State University
(2002). He has been working in semiconductor packaging and assembly for over 19 years, from
supporting high volume manufacturing lines to research and development of advanced
materials. Mr. Martin has spent most of his career developing packaging solutions for high
power RF products. He has worked with GaN devices for over 13 years, developing a portfolio
of package solutions using air cavity and plastic overmold technologies. Mr. Martin is a member
of the International Microelectronics and Packaging Society (IMAPS) and has co-authored
several conference and journal papers.

Abstract
Gallium Nitride (GaN) technologies have been advancing for more than a decade, producing RF
products with greater bandwidths, higher frequencies, and much higher power densities than
other semiconductor materials. To enable the GaN device technology, innovative packaging
solutions have been essential to remove heat from the device, provide appropriate matching for
RF tuning, protect the device during harsh reliability tests, and many other critical features. This
must all be accomplished while maintaining low packaging material and assembly costs for
price-sensitive markets. In this presentation Mr. Martin will show the development of GaN
technologies with an emphasis on the packaging materials and assembly processes used to
make these products. He will demonstrate some of these key features with MACOM product
examples and best practices in the industry. Finally, he will explain the upcoming challenges for
GaN packaging and some of the advanced technologies that may be used in the future to
address these challenges and further increase the performance of GaN RF products.

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