Page 27 - ASME InterPACK 2017 Program

Invited Sessions

Biography Dr. Samuel Graham
Samuel Graham is the Neely Professor and Associate Chair for Research in the Woodruff
School of Mechanical Engineering at the Georgia Institute of Technology. He leads the Georgia Institute of
Electronics Manufacturing and Reliability Laboratory which is focused on the packaging and Technology
reliability of wide bandgap semiconductors, solar cells, and flexible electronics. He also holds a
courtesy appointment in the School of Materials Science and Engineering at the Georgia
Institute of Technology and a joint appointment in the Energy and Transportation Science
Division of Oak Ridge National Laboratory. He is a Fellow of ASME where he recently received
the ASME K-16 Clock Award, is a regular contributor to thermally related programs in GaN
electronics funded by the U.S. Government and Industrial Sponsors, and serves on the advisory
board of the Engineering Sciences Research Foundation of Sandia National Laboratories.

Addressing Thermal Challenges in GaN Device Integration

Abstract
The development of wide bandgap electronics has the ability to create high performance
electronics devices that operate at higher temperatures, efficiencies, frequencies, and with
smaller form factors than their CMOS counterparts. These devices will be instrumental in the
development of new inverter and convertor technologies for electric vehicles, renewable
energy sources, and for electric motor drive systems as well as laser diodes and RF transmit-
ters. Often these devices are heterogeneously integrated with other substrates through
heteroepitaxial growth or through bonding. Their integration with other electronics including
CMOS and compound semiconductors like InP will play a key to the development of new
electronics with diverse functionality. However, this integration will cause thermal challenges
that must be addressed in order to make these devices reliable.

In this talk we discuss the thermal challenges in GaN based electronics, methods to enhance
heat dissipation, and methods to measure their thermal performance. We will discuss the
characterization of thermal conductivity, thermal interface resistance, and the impact of the
device architecture on thermal response of GaN. Examples of integration issues for GaN from
the DARPA DAHI and DARPA Diamond Round Robin program will be covered. Finally, methods
to enhance heat dissipation for integrated GaN devices will be discussed.

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