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                                                        Si
                                     Loose
                                    electron



                                             Si         As          Si





                                                        Si




                                 Figure 3.24  Molecular structure of an n-type semiconductor.




                                                                 Hole
                                                       Si




                                            Si         Ga         Si





                                                       Si




                                 Figure 3.25  Molecular structure of a p-type semiconductor.


            3.7.1   The PN Junctions
            A PN junction or diode is formed by bringing p-type and n-type materials in contact, as shown in Fig. 3.26.
            The n-side is electron-rich while the p-side has only a few electrons. So, the electrons diffuse from the n-side to
            the p-side. Similarly, holes diffuse from the p-side to the n-side. As the electrons and holes cross the junction,
            they combine. When an electron combines with a hole, it means that it becomes part of the covalent bond.
            As a result, a region close to the junction is depleted of electrons and holes and hence this region is called a
            depletion region. Because of the addition of electrons on the p-side, the depletion region on the p-side consists
            of negative acceptor ions and similarly, the depletion region on the n-side consists of positive donor ions due
            to migration of holes. Note that the p-type material (in the absence of the n-type material on the right) is
            electrically neutral even though it has holes. This is because the charge of holes and that of the lattice cancel
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